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INTEGRATED CIRCUITS
DATA SHEET
74LVC1GU04 Inverter
Product specification Supersedes data of 2001 Apr 06 2003 Feb 12
Philips Semiconductors
Product specification
Inverter
FEATURES * Wide supply voltage range from 1.65 to 5.5 V * High noise immunity * Complies with JEDEC standard: - JESD8-7 (1.65 to 1.95 V) - JESD8-5 (2.3 to 2.7 V) - JESD8B/JESD36 (2.7 to 3.6 V). * 24 mA output drive (VCC = 3.0 V) * CMOS low power consumption * Latch-up performance exceeds 250 mA * Direct interface with TTL levels * Input accepts voltages up to 5 V * Multiple package options * ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. * Specified from -40 to +125 C. QUICK REFERENCE DATA Ground = 0 V; Tamb = 25 C; tr = tf 2.5 ns. SYMBOL tPHL/tPLH PARAMETER propagation delay A to Y CONDITIONS VCC = 1.8 V; CL = 30 pF; RL = 1 k VCC = 2.5 V; CL = 30 pF; RL = 500 VCC = 2.7 V; CL = 50 pF; RL = 500 VCC = 3.3 V; CL = 50 pF; RL = 500 VCC = 5.0 V; CL = 50 pF; RL = 500 CI CPD Notes 1. CPD is used to determine the dynamic power dissipation (PD in W). PD = CPD x VCC2 x fi x N + (CL x VCC2 x fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; (CL x VCC2 x fo) = sum of the outputs. 2. The condition is VI = GND to VCC. input capacitance power dissipation capacitance per buffer VCC = 3.3 V; notes 1 and 2 DESCRIPTION
74LVC1GU04
The 74LVC1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. The input can be driven from either 3.3 or 5 V devices. This feature allows the use of this device in a mixed 3.3 and 5 V environment. Schmitt-trigger action at all inputs makes the circuit tolerant for slower input rise and fall time. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1GU04 provides the inverting single state unbuffered function.
TYPICAL 1.7 1.3 1.7 1.6 1.3 6 14.9 ns ns ns ns ns
UNIT
pF pF
2003 Feb 12
2
Philips Semiconductors
Product specification
Inverter
FUNCTION TABLE See note 1. INPUT A L H Note 1. H = HIGH voltage level; L = LOW voltage level. ORDERING INFORMATION PACKAGE TYPE NUMBER 74LVC1GU04GW 74LVC1GU04GV PINNING PIN 1 2 3 4 5 n.c. A GND Y VCC SYMBOL not connected data input A ground (0 V) data output Y supply voltage DESCRIPTION TEMPERATURE RANGE -40 to +125 C -40 to +125 C PINS 5 5 PACKAGE SC-88A SC-74A MATERIAL plastic plastic OUTPUT Y H L
74LVC1GU04
CODE SOT353 SOT753
MARKING VD VU4
handbook, halfpage
n.c. 1 A2 GND 3
MNA042
5 VCC
handbook, halfpage
U04
4 Y
2
A
Y
4
MNA108
Fig.1 Pin configuration.
Fig.2 Logic symbol.
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
74LVC1GU04
handbook, halfpage handbook, halfpage
VCC
VCC
2
1
4 A
MNA109
100 Y
MNA636
Fig.3 IEE/IEC logic symbol.
Fig.4 Logic diagram.
RECOMMENDED OPERATING CONDITIONS SYMBOL VCC VI VO Tamb tr, tf supply voltage input voltage output voltage operating ambient temperature input rise and fall times VCC = 1.65 to 2.7 V VCC = 2.7 to 5.5 V PARAMETER CONDITIONS MIN. 1.65 0 0 -40 0 0 MAX. 5.5 5.5 VCC +125 20 10 UNIT V V V C ns/V ns/V
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V). SYMBOL VCC IIK VI IOK VO IO ICC, IGND Tstg PD Notes 1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed. 2. When VCC = 0 V (Power-down mode), the output voltage van be 5.5 V in normal operation. 2003 Feb 12 4 supply voltage input diode current input voltage output diode current output voltage output source or sink current VCC or GND current storage temperature power dissipation per package for temperature range from -40 to +125 C VI < 0 note 1 VO > VCC or VO < 0 active mode; notes 1 and 2 VO = 0 to VCC PARAMETER CONDITIONS MIN. -0.5 - -0.5 - -0.5 - - -65 - MAX. +6.5 -50 +6.5 50 VCC + 0.5 50 100 +150 200 UNIT V mA V mA V mA mA C mW
Philips Semiconductors
Product specification
Inverter
DC CHARACTERISTICS At recommended operating conditions; voltage are referenced to GND (ground = 0 V). TEST CONDITIONS SYMBOL PARAMETER OTHER Tamb = -40 to +85 C VOL LOW-level output voltage VI = VIH or VIL IO = 100 A IO = 4 mA IO = 8 mA IO = 12 mA IO = 24 mA IO = 32 mA VOH HIGH-level output voltage VI = VIH or VIL IO = -100 A IO = -4 mA IO = -8 mA IO = -12 mA IO = -24 mA IO = -32 mA ILI Ioff ICC ICC input leakage current power OFF leakage current quiescent supply current additional quiescent supply current per pin VI = 5.5 V or GND VI or VO = 5.5 V VI = VCC or GND; IO = 0 VI = VCC - 0.6 V; IO = 0 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 3.6 0 5.5 2.3 to 5.5 VCC - 0.1 1.2 1.9 2.2 2.3 3.8 - - - - - - - - - - 0.1 0.1 0.1 5 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 - - - - - - - - - - - - VCC (V) MIN.
74LVC1GU04
TYP.(1)
MAX.
UNIT
0.1 0.45 0.3 0.4 0.55 0.55 - - - - - - 5 10 10 500
V V V V V V V V V V V V A A A A
Tamb = -40 to +125 C VOL LOW-level output voltage VI = VIH or VIL IO = 100 A IO = 4 mA IO = 8 mA IO = 12 mA IO = 24 mA IO = 32 mA VOH HIGH-level output voltage VI = VIH or VIL IO = -100 A IO = -4 mA IO = -8 mA IO = -12 mA IO = -24 mA IO = -32 mA 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 VCC - 0.1 0.95 1.7 1.9 2.0 3.4 - - - - - - - - - - - - V V V V V V 1.65 to 5.5 1.65 2.3 2.7 3.0 4.5 - - - - - - - - - - - - 0.1 0.70 0.45 0.60 0.80 0.80 V V V V V V
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
74LVC1GU04
TEST CONDITIONS SYMBOL ILI Ioff ICC ICC Note 1. All typical values are measured at VCC = 3.3 V and Tamb = 25 C. AC CHARACTERISTICS GND = 0 V; tr = tf 2.0 ns. TEST CONDITIONS SYMBOL PARAMETER WAVEFORMS Tamb = -40 to +85 C tPHL/tPLH propagation delay A to Y see Figs 5 and 8 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 Tamb = -40 to +125 C tPHL/tPLH propagation delay A to Y see Figs 5 and 8 1.65 to 1.95 2.3 to 2.7 2.7 3.0 to 3.6 4.5 to 5.5 0.3 0.3 0.5 0.5 0.5 0.3 0.3 0.5 0.5 0.5 VCC (V) MIN. PARAMETER OTHER input leakage current power OFF leakage current quiescent supply current additional quiescent supply current per pin VI = 5.5 V or GND VI or VO = 5.5 V VI = VCC or GND; IO = 0 VI = VCC - 0.6 V; IO = 0 0 5.5 2.3 to 5.5 VCC (V) 3.6 - - - - MIN.
TYP.(1) 0.1 - - -
MAX. 5 200 200 5000
UNIT A A A A
TYP.
MAX.
UNIT
1.7 1.3 1.7 1.6 1.3 - - - - -
5.0 4.0 5.0 3.7 3.0
ns ns ns ns ns
6.5 5.5 6.5 5.0 4.0
ns ns ns ns ns
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
AC WAVEFORMS
74LVC1GU04
handbook, halfpage
VI VM GND t PHL VOH t PLH
A input
Y output VOL
VM
MNA637
INPUT VCC VM VI VCC VCC 2.7 V 2.7 V VCC tr = tf 2.0 ns 2.0 ns 2.5 ns 2.5 ns 2.5 ns 1.65 to 1.95 V 0.5 x VCC 2.3 to 2.7 V 2.7 V 3.0 to 3.6 V 4.5 to 5.5 V 0.5 x VCC 1.5 V 1.5 V 0.5 x VCC
VOL and VOH are typical output voltage drop that occur with the output load.
Fig.5 Input A to output Y propagation delay times.
MNA639
handbook, halfpage G
handbook, halfpage
Rbias = 560 k VCC
120 fs (mA/V) 100
80
0.47 F Vi
input
output
100 F
60
A Io
MNA638
40
20
I o G fs = -------V i fi = 1 kHz. VO is constant.
0 0 2 4 VCC (V) 6
Tamb = 25 C.
Fig.6
Test set-up for measuring forward transconductance.
Fig.7
Typical forward transconductance as a function of supply voltage.
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
74LVC1GU04
handbook, full pagewidth
VEXT VCC PULSE GENERATOR VI D.U.T. RT CL RL VO RL
MNA616
VCC 1.65 to 1.95 V 2.3 to 2.7 V 2.7 V 3.0 to 3.6 V 4.5 to 5.5 V
VI VCC VCC 2.7 V 2.7 V VCC
CL 30 pF 30 pF 50 pF 50 pF 50 pF
RL 1 k 500 500 500 500
VEXT tPLH/tPHL open open open open open tPZH/tPHZ GND GND GND GND GND tPZL/tPLZ 2 x VCC 2 x VCC 6V 6V 2 x VCC
Definitions for test circuit: RL = Load resistor. CL = Load capacitance including jig and probe capacitance (see Chapter "AC characteristics"). RT = Termination resistance should be equal to the output impedance Zo of the pulse generator.
Fig.8 Load circuitry for switching times.
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
APPLICATION INFORMATION Some applications for the 74LVC1GU04 are: * Linear amplifier (see Fig.9) * Crystal oscillator (see Fig.10).
74LVC1GU04
Remark to the application information All values given are typical values unless otherwise specified.
handbook, halfpage
R2 VCC
handbook, halfpage
R1
1 F
R1 U04 ZL
R2 U04 C1 out
MNA052
C2
MNA053
ZL > 10 k, R1 3 k and R2 1 M. Open loop amplification: AOL = 20 (typical value). A OL Voltage amplification: A u = - ------------------------------------------R1 1 + ------- ( 1 + A OL ) R2 Maximum output voltage: V o(p-p) V CC - 1.5 V centered at 0.5V CC Unity gain bandwidth product: B = 5 MHz (typical value). C1 = 47 pF (typical). C2 = 22 pF (typical). R1 = 1 to 10 M (typical). R2 optimum value depends on the frequency and required stability against changes in VCC or average minimum ICC [ICC = 2 mA (typical) at VCC = 3.3 V and f = 10 MHz].
Fig.9 Used as a linear amplifier.
Fig.10 Crystal oscillator configuration.
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
PACKAGE OUTLINES Plastic surface mounted package; 5 leads
74LVC1GU04
SOT353
D
B
E
A
X
y
HE
vMA
5
4
Q
A
A1
1
e1 e
2
bp
3
wM B detail X Lp
c
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E (2) 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT353
REFERENCES IEC JEDEC EIAJ SC-88A
EUROPEAN PROJECTION
ISSUE DATE 97-02-28
2003 Feb 12
10
Philips Semiconductors
Product specification
Inverter
74LVC1GU04
Plastic surface mounted package; 5 leads
SOT753
D
B
E
A
X
y
HE
vMA
5
4
Q
A A1 c
1
2
3
detail X
Lp
e
bp
wM B
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 0.100 0.013 bp 0.40 0.25 c 0.26 0.10 D 3.1 2.7 E 1.7 1.3 e 0.95 HE 3.0 2.5 Lp 0.6 0.2 Q 0.33 0.23 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT753
REFERENCES IEC JEDEC JEITA SC-74A
EUROPEAN PROJECTION
ISSUE DATE 02-04-16
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
SOLDERING Introduction to soldering surface mount packages This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "Data Handbook IC26; Integrated Circuit Packages" (document order number 9398 652 90011). There is no soldering method that is ideal for all surface mount IC packages. Wave soldering can still be used for certain surface mount ICs, but it is not suitable for fine pitch SMDs. In these situations reflow soldering is recommended. Reflow soldering Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several methods exist for reflowing; for example, convection or convection/infrared heating in a conveyor type oven. Throughput times (preheating, soldering and cooling) vary between 100 and 200 seconds depending on heating method. Typical reflow peak temperatures range from 215 to 250 C. The top-surface temperature of the packages should preferably be kept: * below 220 C for all the BGA packages and packages with a thickness 2.5mm and packages with a thickness <2.5 mm and a volume 350 mm3 so called thick/large packages * below 235 C for packages with a thickness <2.5 mm and a volume <350 mm3 so called small/thin packages. Wave soldering Conventional single wave soldering is not recommended for surface mount devices (SMDs) or printed-circuit boards with a high component density, as solder bridging and non-wetting can present major problems. To overcome these problems the double-wave soldering method was specifically developed.
74LVC1GU04
If wave soldering is used the following conditions must be observed for optimal results: * Use a double-wave soldering method comprising a turbulent wave with high upward pressure followed by a smooth laminar wave. * For packages with leads on two sides and a pitch (e): - larger than or equal to 1.27 mm, the footprint longitudinal axis is preferred to be parallel to the transport direction of the printed-circuit board; - smaller than 1.27 mm, the footprint longitudinal axis must be parallel to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves at the downstream end. * For packages with leads on four sides, the footprint must be placed at a 45 angle to the transport direction of the printed-circuit board. The footprint must incorporate solder thieves downstream and at the side corners. During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Manual soldering Fix the component by first soldering two diagonally-opposite end leads. Use a low voltage (24 V or less) soldering iron applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
2003 Feb 12
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Philips Semiconductors
Product specification
Inverter
Suitability of surface mount IC packages for wave and reflow soldering methods PACKAGE(1) BGA, LBGA, LFBGA, SQFP, TFBGA, VFBGA DHVQFN, HBCC, HBGA, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, HVQFN, HVSON, SMS PLCC(4), SO, SOJ LQFP, QFP, TQFP SSOP, TSSOP, VSO, VSSOP Notes not suitable not suitable(3)
74LVC1GU04
SOLDERING METHOD WAVE REFLOW(2) suitable suitable suitable suitable suitable
suitable not not recommended(4)(5) recommended(6)
1. For more detailed information on the BGA packages refer to the "(LF)BGA Application Note" (AN01026); order a copy from your Philips Semiconductors sales office. 2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum temperature (with respect to time) and body size of the package, there is a risk that internal or external package cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the Drypack information in the "Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods". 3. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side, the solder might be deposited on the heatsink surface. 4. If wave soldering is considered, then the package must be placed at a 45 angle to the solder wave direction. The package footprint must incorporate solder thieves downstream and at the side corners. 5. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm. 6. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
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Philips Semiconductors
Product specification
Inverter
DATA SHEET STATUS LEVEL I DATA SHEET STATUS(1) Objective data PRODUCT STATUS(2)(3) Development DEFINITION
74LVC1GU04
This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
II
Preliminary data Qualification
III
Product data
Production
Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. DISCLAIMERS Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
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Philips Semiconductors
Product specification
Inverter
NOTES
74LVC1GU04
2003 Feb 12
15
Philips Semiconductors - a worldwide company
Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
(c) Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613508/03/pp16
Date of release: 2003
Feb 12
Document order number:
9397 750 10078

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